R&D Engineer, GaN epitaxy and MicroLED

About the Company

We are a global gallium nitride (GaN) material and MicroLED technology developer, providing a wide range of solutions to meet the specific needs of our customers. With our novel PoroGaN® and DynamicPixelTuning® technology, we are revolutionising the Microdisplay and semiconductor industries.

About the role

We have an exciting opportunity for an experienced R&D engineer, GaN epitaxy and MicroLED, to support our R&D and product development teams as we continue to grow and develop our technology. The successful candidate will be heavily involved in our exciting technology projects, playing a key role in helping us to deliver high quality products and services to our world-leading customers and partners.

Key tasks and responsibilities include:

• Develop advanced MOVPE process for novel porous GaN structures to support R&D projects and product development for major global customers
• Work with new and existing suppliers and contractors to deliver required epitaxial wafers into various technology projects according to the work schedule and specs
• Document and implement R&D practices, approaches and policies
• Contribute to the development of in-house characterisation capabilities to minimize the learning cycle time
• Support production by analysing the connection between epi process and the device data to improve yield and performance

Skills/Experience required:

• PhD or Master degree in Electrical Engineering, Physics, Materials Engineering or related field or equivalent experience with good background knowledge on GaN materials and LED devices.
• Hands on experience in GaN-on-Si epitaxy
• MOCVD process development with a proven track record
• Strong understanding of the dependence of LED device performance on epitaxy process and design
• Good understanding of GaN materials and device characterisation techniques, such as XRD, PL, AFM, SEM, TEM, EL etc.
• Good analytical and organisational skills
• Good communication at all levels within the company and fluent in English

Advantageous Skills:

• Industry experience with GaN epitaxy process development
• Physics-based modelling experience
• Fluent in Chinese

Summary:

At Porotech, we would like you to enjoy the success of the company to emerge from the UK and lead the world’s III-nitride semiconductor development, which you will be helping to build and be part of. It is an ideal time to join with a business with unique technology and products that are ready to be delivered and going to change the market.

Competitive salary dependent on experience. The ideal candidate could also benefit from a generous company share option program as well as health insurance, dental insurance and pension plan. If you are interested in helping us change the world, send your CV with a cover letter to careers@porotech.co.uk. We look forward to making your acquaintance.